unisonic technologies co., ltd x1049a npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r201-061.c high gain transistor ? features * v cev = 80v * high gain * 20 amps pulse current to-92 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 x1049al-t92-b x1049ag-t92-b to-92 e b c tape box x1049al-t92-k x1049ag-t92-k to-92 e b c bulk x1049al-t92-r X1049AG-T92-R to-92 e b c tape reel
x1049a npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-061.c ? absolute maximum rating (t a =25 ) parameter symbol ratings unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5 v collector current dc i c 4 a pulse 20 a base current i b 500 ma power dissipation p d 1 w junction temperature t j 125 operating temperature t opr -20 ~ +85 storage temperature t stg -40 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100 a 80 120 v collector-emitter breakdown voltage v ceo i c =10ma 25 35 v collector-emitter breakdown voltage v ces i c =100 a 80 120 v collector-emitter breakdown voltage v cev i c =100 a, v eb =1v 80 120 v emitter-base breakdown voltage v ebo i e =100 a 5 8.75 v collector cut-off current i cbo v cb =50v 0.3 10 na emitter cut-off current i ebo v e b=4v 0.3 10 na collector emitter cut-off current i ces v ces =50v 0.3 10 na collector-emitter sa turation voltage (note) v ce(sat) i c =0.5a, i b =10ma 30 70 mv i c =1a, i b =10ma 60 130 i c =2a, i b =10ma 125 280 i c =4a, i b =50ma 155 400 base-emitter saturation voltage (note) v be ( sat ) i c =4a, i b =50ma 890 980 mv base-emitter turn-on voltage (note) v be ( on ) i c =4a, v ce =2v 820 920 mv dc current gain (note) h fe i c =10ma, vce =2v 250 430 i c =0.5a, v ce =2v 300 450 i c =1a, v ce =2v 300 450 1200 i c= 4a, v ce =2v 200 350 i c =20a, v ce =2v 7 transition frequency f t i c =50ma, v ce =10v, f=50mhz 180 mhz output capacitance c obo v cb =10v, f=1mhz 45 60 pf turn-on time t on i c =4a, i b =40ma, v cc =10v 125 ns turn-off time t off i c =4a, i b =40ma, v cc =10v 380 ns note: measured under pulsed conditions. pulse width=300 s. duty cycle 2%
x1049a npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-061.c ? typical characteristics
x1049a npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-061.c ? typical characteristics 180 160 140 120 60 0 0.1ms 1ms 10ms pulse width transient thermal resistance 100ms 1s 100s 100 80 40 20 10s d=1(d,c) d=0.5 d=0.2 d=0.1 d=0.05 ambient temperature ( ) 1.0 0.75 0.25 0.00 -40 0 40 80 120 160 200 0.50 power dissipation vs. ambient temperature single pulse utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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